Growth and Characterization of Titanium Silicate Nanofilms for Gate Oxide Applications
Atomic layer chemical vapor deposition (ALCVD) of titanium silicate nanofilms using a precursor combination of tetrakis-diethylamido-titanium (Ti(N(C2H5)2)4) and tetra-n-butyl-orthosilicate (Si(OnBu)4) was studied for high dielectric gate oxides. ALCVD temperature window in our study was 170–210 °C with a growth rate of 0.8 Å/cycle. We investigated the effects of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on the titanium silicate nanofilm growth. The saturated composition of Ti/(Ti+Si) ratio was 0.6 and impurity concentrations were less than 1 atomic %. Dielectric constant (k) of the as-deposited titanium silicate film was ∼10.5. Hysteresis in capacitance–voltage (C–V) measurements was less than 0.35 V before and after annealing. The leakage current density of the as-deposited and 400 °C annealed film was 1.4 × 10−4 A/cm2, 4.2 × 10−4 A/cm2, respectively, at a bias of −1 V.
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Document Type: Research Article
Publication date: 2008-02-01
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