Skip to main content

Growth and Characterization of Titanium Silicate Nanofilms for Gate Oxide Applications

Buy Article:

$113.00 plus tax (Refund Policy)

Abstract:

Atomic layer chemical vapor deposition (ALCVD) of titanium silicate nanofilms using a precursor combination of tetrakis-diethylamido-titanium (Ti(N(C2H5)2)4) and tetra-n-butyl-orthosilicate (Si(OnBu)4) was studied for high dielectric gate oxides. ALCVD temperature window in our study was 170–210 °C with a growth rate of 0.8 Å/cycle. We investigated the effects of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on the titanium silicate nanofilm growth. The saturated composition of Ti/(Ti+Si) ratio was 0.6 and impurity concentrations were less than 1 atomic %. Dielectric constant (k) of the as-deposited titanium silicate film was ∼10.5. Hysteresis in capacitance–voltage (C–V) measurements was less than 0.35 V before and after annealing. The leakage current density of the as-deposited and 400 °C annealed film was 1.4 × 10−4 A/cm2, 4.2 × 10−4 A/cm2, respectively, at a bias of −1 V.

Keywords: ALCVD; GATE OXIDE; NANOFILM; TITANIUM SILICATE

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2008.A206

Publication date: 2008-02-01

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free ContentFree content
  • Partial Free ContentPartial Free content
  • New ContentNew content
  • Open Access ContentOpen access content
  • Partial Open Access ContentPartial Open access content
  • Subscribed ContentSubscribed content
  • Partial Subscribed ContentPartial Subscribed content
  • Free Trial ContentFree trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more