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Self-Organization of CrSi2 Nanoislands on Si(111) and Growth of Monocrystalline Silicon with Buried Multilayers of CrSi2 Nanocrystallites

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The process of self-organization of CrSi2 nanosize islands on Si(111)7×7 surface has been investigated during reactive deposition (RDE) of Cr at 500 °C by methods of low energy diffraction (LEED) and differential reflectance spectroscopy (DRS). Morphology of grown samples has been studied by atomic force microscopy (AFM). DRS data have demonstrated the semiconductor nature of silicide islands from the beginning of Cr deposition at 500 °C. The optimal temperature (750 °C) and optimal Si thickness (50 nm) have been determined for silicon molecular epitaxy (MBE) growth atop CrSi2 nanosize islands. Monolithic silicon–silicide heterostructures with multilayers of CrSi2 nanosize crystallites have been grown.
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Document Type: Research Article

Publication date: 2008-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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