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Characteristics of Dielectrophoretically Aligned UV-Blue GaN Nanowire LEDs

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This is a report on the characteristics of UV-blue light emitting diodes (LEDs) containing homojunction gallium nitride (GaN) nanowires (NWs). These LEDs were prepared by the dielectrophoresis assisted assembly deposition (DAAD) method. The incorporation of an additional silicon dioxide (SiO2) and a Au capping metal layer was found to improve the electrical and optical properties of the DAAD-prepared GaN NW LEDs. These LEDs exhibited a parasitic series resistance of 120–180 kΩ with a sharp turn-on forward voltage of 3.4–4.0 V and had as low as ∼7 × 10−7 A of leakage current for a reverse bias of −10 V. Typical electroluminescence (EL) spectra, observed from these LEDs under a forward bias, had a broad ultraviolet (UV)-blue emission with a wavelength of 388–422 nm. These LEDs could be seen with the naked eye. We concluded that the high-brightness EL spectra resulted from the enhancement of the carrier injection due to the size effect of the n-GaN nanowires on the p-GaN substrate.
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Document Type: Research Article

Publication date: 2008-01-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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