A Comparative Study on SWCNT and DWCNT Field-Effect Transistors
Abstract:Field-effect transistors have been fabricated using single-walled carbon nanotubes (SWCNTs) and double-walled carbon nanotubes (DWCNTs), and their electrical transport properties have been studied comparatively. While a semiconducting SWCNT exhibits better field-effect characteristics than a DWCNT counterpart, the DWCNT shows more complicated response to external gate modulation. Depending on the nature of the two shells of a DWCNT, i.e., whether the shell is semiconducting (S) or metallic (M), a DWCNT device can be described as either S–S, or S–M, or M–S, or M–M. It was found that the S–S and M–M or M–S devices show similar field-effect characteristics to those found in SWCNT devices. But for S–M DWCNT devices, distinct field-effect characteristic was found and attributed to the combined effects of intershell interactions and screening byfree carriers of the inner metallic shell. The S–M DWCNT devices thus provide a perfect system for studying the important intershell interaction, and information on the effect of this interaction on the electrical properties of a multi-walled carbon nanotube can be obtained bya comparative studyof S–M DWCNT and S-SWCNT devices.
Document Type: Research Article
Publication date: 2007-04-01
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