Wavelength Shift of InP-Based InAs Quantum Dot Lasers Above Room Temperature
Abstract:For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.
Document Type: Research Article
Publication date: 2007-12-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites