Authors: Lee, Sehan; Yu, Yunseop; Hwang, Sungwoo; Ahn, Doyeol

Source: Journal of Nanoscience and Nanotechnology, Volume 7, Number 11, November 2007 , pp. 4089-4093(5)

Publisher: American Scientific Publishers

Abstract:

An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

Keywords: NANOWIRE; SCHOTTKY CONTACT; THERMIONIC FIELD EMISSION; THERMAL EMISSION; EQUIVALENT CIRCUIT

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2007.012

Publication date: 2007-11-01

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• Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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