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Effect of Temperature on the Growth of InAs/GaAs Quantum Dots Grown on a Strained GaAs Layer

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We have studied the effect of temperature on the growth of InAs quantum dots (QDs) grown on a strained GaAs layer. The 2.0 nm thick, strained GaAs was obtained by growing it on a relaxed In0.15Ga0.85As layer. We observed that the density of QDs grown in this manner strongly depends on the growth temperature. A change in the growth temperature from 510 °C to 460 °C resulted in a large increase in the QD density from 2.3 × 1010 cm−2 to 6.7 × 1010 cm−2 and a sharp reduction in their height from 8.0 nm to 3.0 nm. Photoluminescence (PL) results from these QDs are also presented.


Document Type: Research Article


Publication date: August 1, 2007

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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