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Formation of 1D-Nanowires and 2D Nanophases in Heteroepitaxy of Sbon High Index Si(5 5 12) Surface

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The surface topography of high index Si(5 5 12) presents a single-domain planar reconstruction that is composed of (225) and (337) regions with nanoscale widths and row like trenches and provides an unique template for the growth of nanostructures. In this study, Sb has been adsorbed on this Silicon surface to form various superstructural phases by steering the kinetic parameters and post growth annealing of the surface. Different pathways adopted have shown the formation of stabilized ordered superstructural phases corresponding to various coverages and substrate temperatures and are probed in-situ by complementary surface sensitive techniques such as Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), and Electron Energy Loss Spectroscopy (EELS). The growth of Sb at 300 °C substrate temperature and annealing the formed system to different temperatures upto 820 °C leads to the formation of low dimensional phases having anisotropicity along the (110) direction like atomic wires. The results also demonstrate the pathways in tailoring 1D and 2D nanostructure formation, on this technologically and scientifically important interface.
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Document Type: Research Article

Publication date: 2007-06-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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