Authors: Liao, L.; Li, J.C.; Liu, C.; Xu, Z.; Wang, W.L.; Liu, S.; Bai, X.D.; Wang, E.G.

Source: Journal of Nanoscience and Nanotechnology, Volume 7, Number 3, March 2007 , pp. 1080-1083(4)

Publisher: American Scientific Publishers

Abstract:

Field electron emission of GaN-filled carbon nanotubes, grown by microwave plasma enhanced chemical vapor deposition, was investigated. The detailed structural characterization shows that the filled nanotube has a GaN-core/C-shell structure, in which the GaN wire corresponds to a wurtzite structure. The field emission properties of the GaN-filled carbon nanotubes have been achieved with high and stable emission current. It is attributed to the unique cable-like structure, which makes the GaN-core/C-shell composite mechanically solid and chemically stable. This study suggests the GaN-filled carbon nanotube as an ideal candidate for future high-current and high-power field emitter applications.

Keywords: GAN-FILLED CARBON NANOTUBES; FIELD EMISSION; NANOTUBE FILLING; GAN NANOCABLES

Document Type: Short communication

DOI: http://dx.doi.org/10.1166/jnn.2007.413

Publication date: 2007-03-01

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