Field Emission of GaN-Filled Carbon Nanotubes: High and Stable Emission Current

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Abstract:

Field electron emission of GaN-filled carbon nanotubes, grown by microwave plasma enhanced chemical vapor deposition, was investigated. The detailed structural characterization shows that the filled nanotube has a GaN-core/C-shell structure, in which the GaN wire corresponds to a wurtzite structure. The field emission properties of the GaN-filled carbon nanotubes have been achieved with high and stable emission current. It is attributed to the unique cable-like structure, which makes the GaN-core/C-shell composite mechanically solid and chemically stable. This study suggests the GaN-filled carbon nanotube as an ideal candidate for future high-current and high-power field emitter applications.

Keywords: FIELD EMISSION; GAN NANOCABLES; GAN-FILLED CARBON NANOTUBES; NANOTUBE FILLING

Document Type: Short Communication

DOI: http://dx.doi.org/10.1166/jnn.2007.413

Publication date: March 1, 2007

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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