A Simple Route to Ultra Long SiC Nanowires

Authors: Cai, K.F.; Lei, Q.; Zhang, A.X.

Source: Journal of Nanoscience and Nanotechnology, Volume 7, Number 2, February 2007 , pp. 580-583(4)

Publisher: American Scientific Publishers

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Abstract:

SiC nanowires are prepared by pyrolysis of hexamethyldisilane (HMDS), at 1200 °C in a flowing Ar atmosphere. The length of the nanowires is in millimeter scale. Transmission electron microscopy observations indicate that the diameters of the SiC nanowires are in the range of about 8 to 120 nm, and that most of the nanowires have numerous stacking faults. The formation mechanism of the nanowires is proposed.

Keywords: SIC NANOWIRES; NANOSTRUCTURES; HEXAMETHYLDISILANE; PYROLYSIS; CRYSTAL GROWTH

Document Type: Research article

DOI: 10.1166/jnn.2007.143

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