Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.

Publisher: American Scientific Publishers

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Volume 7, Number 1, January 2007

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Preface

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A Special Issue on Nanotechnology for Information Storage
pp. i-ii(2)
Authors: Wu, Yihong; Chong, Towchong

Reviews

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Exchange Coupling and Its Applications in Magnetic Data Storage
pp. 13-45(33)
Authors: Li, Kebin; Wu, Yihong; Guo, Zaibing; Zheng, Yuankai; Han, Guchang; Qiu, Jinjun; Luo, Ping; An, Lihua; Zhou, Tiejun

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Advanced Modeling Techniques for Micromagnetic Systems
pp. 46-64(19)
Authors: Jalil, M. B. A.; Tan, S. G.; Cheng, X. Z.

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Nanophase Change for Data Storage Applications
pp. 65-93(29)
Authors: Shi, L. P.; Chong, T. C.

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Application of Femtosecond-Laser Induced Nanostructures in Optical Memory
pp. 94-104(11)
Authors: Shimotsuma, Yasuhiko; Sakakura, Masaaki; Miura, Kiyotaka; Qiu, Jiarong; Kazansky, Peter G.; Fujita, Koji; Hirao, Andkazuyuki

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Magnetic Random Access Memory (MRAM)
pp. 117-137(21)
Authors: Zheng, Yuankai; Wu, Yihong; Li, Kebin; Qiu, Jinjun; Han, Guchang; Guo, Zaibing; Luo, Ping; An, Lihua; Liu, Zhiyong; Wang, Li; Tan, Seng Ghee; Zong, Baoyu; Liu, Bo

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Molecular Memory Based on Nanowire–Molecular Wire Heterostructures
pp. 138-150(13)
Authors: Li, Chao; Lei, Bo; Fan, Wendy; Zhang, Daihua; Meyyappan, M.; Zhou, Chongwu

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Defect-Tolerant Architectures for Nanoelectronic Crossbar Memories
pp. 151-167(17)
Authors: Strukov, Dmitri B.; Likharev, Konstantin K.

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Power Dissipation in Spintronic Devices: A General Perspective
pp. 168-180(13)
Author: Bandyopadhyay, Supriyo

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MEMS-Based Probe Recording Technology
pp. 181-192(12)
Author: Yang, Jiaping

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Silicon Nanocrystal Memories: A Status Update
pp. 193-205(13)
Authors: Compagnoni, Christian Monzio; Gusmeroli, Riccardo; Ielmini, Daniele; Spinelli, Alessandro S.; Lacaita, Andrea L.

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FePt Nanocluster Films for High-Density Magnetic Recording
pp. 206-224(19)
Authors: Xu, Y. F.; Yan, M. L.; Sellmyer, D. J.

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Fabrication of Magnetic Nanodot Arrays for Patterned Magnetic Recording Media
pp. 225-231(7)
Authors: Sato, Hirotaka; Homma, Takayuki

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Optical Response of Photopolymer Materials for Holographic Data Storage Applications
pp. 232-242(11)
Authors: Sheridan, J. T.; Gleeson, M. R.; Close, C. E.; Kelly, J. V.

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Physics of Perpendicular Recording with a Patterned Soft Underlayer
pp. 243-254(12)
Authors: Khizroev, Sakhrat; Hijazi, Yazan; Amos, Nissim; Felissaint, Esnick; Joshi, Nikhil; Ikkawi, R.; Chomko, Roman; Litvinov, Dmitri

Research Articles

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Surface Morphology of Epitaxial Magnetic Tunnel Junctions
pp. 255-258(4)
Authors: Mizuguchi, M.; Suzuki, Y.; Nagahama, T.; Yuasa, S.

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Manipulating Spin Current in the Magnetic Nanopillar
pp. 259-264(6)
Authors: Yang, T.; Hirohata, A.; Kimura, T.; Otani, Y.

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Self-Organized Magnetic Nanowire Arrays Based on Alumina and Titania Templates
pp. 272-285(14)
Authors: Prida, V. M.; Pirota, K. R.; Navas, D.; Asenjo, A.; Hernández-Vélez, M.; Vázquez, M.

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Toward Understanding the Mechanism of Nonlinear Optical Characteristics of PbTe Thin Film for Nano-Optical Memory
pp. 293-297(5)
Authors: Lee, Taek Sung; Lee, Hyun Seok; Cheong, Byung-Ki; Jeong, Jeung-Hyun; Kang, Dae-Hwan; Zhe, Wu; Kim, Won Mok; Kim, Donghwan; Cho, Kyuman

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Simulation-Based Comparison of Cell Design Concepts for Phase Change Random Access Memory
pp. 298-305(8)
Authors: Kim, Dae-Hwang; Merget, Florian; Först, Michael; Kurz, Heinrich

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Two-Dimensional Ultrahigh-Density X-ray Optical Memory
pp. 306-315(10)
Authors: Bezirganyan, Hakob P.; Bezirganyan, Siranush E.; Bezirganyan, Hayk H.; Bezirganyan, Petros H.

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Ge Quantum Dot Memory Structure with Laterally Ordered Highly Dense Arrays of Ge Dots
pp. 316-321(6)
Authors: Nassiopoulou, A. G.; Olzierski, A.; Tsoi, E.; Berbezier, I.; Karmous, A.

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Experimental Study of Single-Electron Phenomena in Silicon Nanocrystal Memories
pp. 322-328(7)
Authors: Pace, C.; Crupi, F.; Corso, D.; Lombardo, S.

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Performance of Silicon Nanocrystal Non-Volatile Memory Devices Under Various Programming Mechanisms
pp. 329-334(6)
Authors: Ng, C. Y.; Chen, T. P.; Wong, J. I.; Yang, M.; Khor, T. S.; New, C. L.; Li, C. M.; Trigg, A. D.; Li, S.

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Charge-Trapping Effects Caused by Ammonia in Carbon Nanotubes
pp. 335-338(4)
Authors: Li, Hong; Zhang, Qing; Peng, Ning; Liu, Ningyi; Lee, Yi Chau; Tan, Ooi Kiang; Marazari, Nicola; Thompson, Carl V.

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Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals
pp. 339-343(5)
Authors: Yeh, P. H.; Chen, L. J.; Liu, P. T.; Wang, D. Y.; Chang, T. C.

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Field Dependence of Switching Currents in an Exchange Biased Spin Valve
pp. 344-349(6)
Authors: Nguyen, Hoang Yen Thi; Joo, Sung-Jung; Jung, Kuyoul; Shin, Kyung-Ho

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Synthesis and Magnetic Properties of FePt Nanoparticles with Hard Nonmagnetic Shells
pp. 350-355(6)
Authors: Kang, Shishou; Shi, Shifan; Miao, G. X.; Jia, Zhiyong; Nikles, David E.; Harrell, J. W.

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Two-Silicon-Nanocrystal Layer Memory Structure with Improved Retention Characteristics
pp. 368-373(6)
Authors: Nassiopoulou, A. G.; Salonidou, A.

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Statistical Study of Effective Anisotropy Field in Ordered Ferromagnetic Nanowire Arrays
pp. 381-386(6)
Authors: Zhao, S.; Clime, L.; Chan, K.; Normandin, F.; Roberge, H.; Yelon, A.; Cochrane, R. W.; Veres, T.

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