@article {Chen:2006:1533-4880:3789,
title = "Carbon Nanotube Multi-Channeled Field-Effect Transistors",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2006",
volume = "6",
number = "12",
publication date ="2006-12-01T00:00:00",
pages = "3789-3793",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2006/00000006/00000012/art00019",
doi = "doi:10.1166/jnn.2006.626",
keyword = "TRANSCONDUCTANCE, MULTI-CHANNEL, SINGLE-WALL CARBON NANOTUBES, FIELD-EFFECT TRANSISTORS",
author = "Chen, Changxin and Zhang, Yafei",
abstract = "Field-effect transistors (FETs) with multiple channels of single-wall carbon nanotubes (SWCNTs) have been constructed. SWCNT channels of the FETs are dispersedly aligned between the source and the drain by electric-field manipulation of surface decorated SWCNTs. The obtained multi-channeled
FETs not only can meet the requirement of large output current and high transconductance, but also manifested good reliability and applicability. It is found that the transconductance of the multi-channel FET has an almost linear dependency on the SWCNT channel number, which opens up a promising
way to tune the transconductance of FETs by controlling the channel number.",
}