Carbon Nanotube Multi-Channeled Field-Effect Transistors
Abstract:Field-effect transistors (FETs) with multiple channels of single-wall carbon nanotubes (SWCNTs) have been constructed. SWCNT channels of the FETs are dispersedly aligned between the source and the drain by electric-field manipulation of surface decorated SWCNTs. The obtained multi-channeled FETs not only can meet the requirement of large output current and high transconductance, but also manifested good reliability and applicability. It is found that the transconductance of the multi-channel FET has an almost linear dependency on the SWCNT channel number, which opens up a promising way to tune the transconductance of FETs by controlling the channel number.
Document Type: Research Article
Publication date: December 1, 2006
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- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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