Catalyst-Free Synthesis of Well-Aligned ZnO Nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N Substrates
Well-aligned ZnO nanowires have been synthesized vertically on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates, using a catalyst-free carbon thermal-reduction vapor phase deposition method for the first time. The as-synthesized nanowires are single crystalline wurtzite structure, and have a growth direction of . Each nanowire has a smooth surface, and uniform diameter along the growth direction. The average diameter and length of these nanowires are 120–150 nm, and 3–10 μm, respectively. We suggest that the growth mechanism follow a self-catalyzing growth model. Excitonic emission peaked around 385 nm dominates the room-temperature photoluminescence spectra of these nanowires. The room-temperature photoluminescence and Raman scattering spectra show that these nanowires have good optical quality with very less structural defects.
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Document Type: Research Article
Publication date: 2006-12-01
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