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Theoretical Study on Controllability of Quantum State Energy in an InGaAs/GaAs Quantum Dot Buried in InGaAs

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We theoretically studied the relationship between quantum energy states and structural parameters of an InGaAs/GaAs quantum dot (QD) buried in strained InGaAs, emitting at 1.1 to 1.4 m. The crystal distortion of the buried QD structure in three dimensions was computed based on the three-dimensional finite element method. Under the computed strain fields, the Schrödinger equation was solved to obtain wavefunctions and eigenenergies. By calculating the dependence on structural parameters, we investigated the controllable range of the ground state energy and the energy separation between the ground state and the first excited state. We found that the energy separation exhibited a maximum value as a function of QD composition, enabling us to identify the composition of the QD structure. The effects of the burying layer composition and QD diameter were also investigated to expand the controllable range of the state energy. We also showed that the wavefunction symmetry was improved by burying the QD in the InGaAs layer. Our results will be useful in developing advanced devices for optical telecommunications and quantum information technology.


Document Type: Research Article


Publication date: December 1, 2006

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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