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Nanoparticle Embedded p-Type Electrodes for GaN-Based Flip-Chip Light Emitting Diodes

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Abstract:

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn–Ni nanoparticles/Ag schemes. The Zn–Ni nanoparticles/Ag contacts produce specific contact resistances of 10−5–10−6 Ωcm2 when annealed at temperatures of 330–530 °C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn–Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn–Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

Keywords: GAN; LIGHT EMITTING DIODE; NANOPARTICLE; OHMIC CONTACTS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2006.053

Publication date: November 1, 2006

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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