Electronic Structure of P-Doped ZnO Films with p-Type Conductivity
Authors: Vaithianathan, Veeramuthu; Moon, Jong Ha; Chang, Chang-Hwan; Asokan, Kandasami; Kim, Sang Sub
Source: Journal of Nanoscience and Nanotechnology, Volume 6, Number 11, November 2006 , pp. 3422-3425(4)
Publisher: American Scientific Publishers
Abstract:The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.
Document Type: Research Article
Publication date: 2006-11-01
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