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Preparation of TaN Thin Film by H2 Plasma Assisted Atomic Layer Deposition Using Tert-Butylimino-Tris-Ethylmethylamino Tantalum

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Abstract:

The plasma assisted atomic layer deposition (ALD) of tantalum nitride (TaN) thin films were conducted using tert-butylimino-tris-ethylmethylamino tantalum (TBTEMAT) and hydrogen plasma at 250 °C. The effects of H2-plasma pulse time and RF power on the film properties, such as resistivity, surface roughness, step coverage and stability in air, were examined. The film growth rate (thickness/cycle) was in the range of 0.05–0.08 nm/cycle and the resistivity of the films varied from 490 to 70000 cm, depending on the plasma conditions. Longer plasma pulse times and increasing RF power yielded films of lower resistivity along with improving the stability. The films were smooth and the conformality of the films deposited in 0.28 m holes with an aspect ratio of 7:1 was 100%.

Keywords: ATOMIC LAYER DEPOSITION; NANO THIN FILM; PLASMA; TAN

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2006.018

Publication date: November 1, 2006

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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