Fabrication of 3-Dimensional PbZr_1−x Ti_xO₃ Nanoscale Thin Film Capacitors for High Density Ferroelectric Random Access Memory Devices

Authors: Shin, Sangmin; Koo, June-Mo; Kim, Sukpil; Seo, Bum-Seok; Lee, Jung-Hyun; Baik, Hionsuck; Park, Youngsoo; Han, Hee; Baik, Sunggi; Lee, June Key

Source: Journal of Nanoscience and Nanotechnology, Volume 6, Number 11, November 2006 , pp. 3333-3337(5)

Publisher: American Scientific Publishers

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Abstract:

PbZr_x Ti_1−xO₃ (PZT) thin films were deposited on 3-dimensional (3D) nano-scale trench structures for use in giga-bit density ferroelectric random access memories. PZT thin films were deposited by liquid delivery metalorganic chemical vapor deposition using Pb(thd)₂, Zr(MMP)₄, and Ti(MMP)₄ precursors dissolved in ethyl cyclohexane. Iridium thin films were deposited by atomic layer deposition, and they exhibited excellent properties for capacitor electrodes even at a thickness of 20 nm. The trench capacitor was composed of three layers, viz. Ir/PZT/Ir (20/60/20 nm), and had a diameter of 250 nm and a height of 400 nm. Almost 100% step coverage was obtained at a deposition temperature of 530 °C. The PZT thin film capacitors with a thickness of 60 nm on a planar structure exhibited a remnant polarization (P_r of 28 μC/cm², but the P_r value of the 3D PZT capacitors decreased slightly with decreasing 3D trench pattern size. The transmission electron microscope analysis indicated that the PZT thin films had compositional uniformity in the 3D trench region. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative proportion exhibited strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under an external bias of 2.1 V and had a remnant polarization of 19 ∼ 24 μC/cm².

Keywords: PZT; FRAM; CAPACITOR; MOCVD; FERROELECTRIC

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2006.004

Publication date: 2006-11-01

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