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Synthesis of Silica Nanowires by Active Oxidation of Silicon Substrates

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Amorphous silica nanowires have been produced by thermal annealing of Si/SiO2/Ni substrate structures at 900 °C under an atmosphere of hexamethyldisilazane (HMDS) and hydrogen (H2). The wires have diameter ranging from 35 to 55 nm, which are controlled by the Ni particle size. It is demonstrated that the growth occurs through vapor–liquid–solid mechanisms, and it is proposed that the vapor source is volatile SiO generated from the etching of the Si substrate through active oxidation reactions. The role of the HMDS-H2 atmosphere in promoting such reactions is discussed.


Document Type: Research Article


Publication date: 2006-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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