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Field Emission in Doped Nanotubes

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Abstract:

Doping into nanotubes is an attractive and significant way to tailor their electron transport and emission properties. This article reviews some recent experimental and theoretical advances in the studies of doping behaviors in carbon nanotubes and gallium nitrogen nanotubes, and doping effects on their field electron emission properties. The general theory for field emission mechanism of one-dimensional nanosystems is presented to provide an overall picture of the field emission process and doping behavior. Potential applications of doped nanotubes as diverse nanoscale emitters, microscopy probes, electronic guns and nanoelectronic devices are discussed.

Keywords: DOPING; FIELD EMISSION; LOCALIZED DOPING ELECTRONIC STATES; NANOTUBES

Document Type: Review Article

DOI: http://dx.doi.org/10.1166/jnn.2005.305

Publication date: September 1, 2005

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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