Doped Semiconductor Nanomaterials

Authors: Chen, Xiaobo; Lou, Yongbing; Dayal, Smita; Qiu, Xiaofeng; Krolicki, Robert; Burda, Clemens; Zhao, Chengfang; Becker, James

Source: Journal of Nanoscience and Nanotechnology, Volume 5, Number 9, September 2005 , pp. 1408-1420(13)

Publisher: American Scientific Publishers

Key:

- Free Content

- New Content

- Subscribed Content

- Free Trial Content

Abstract:

The development and properties of doped nanomaterials including doped titanium dioxide, doped silicon, and doped cadmium telluride are reviewed, as well as their ultrafast dynamics. Doping nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas. The electronic, optical, photochemical, photoelectrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by doping different elements. The materials can be engineered towards specific applications through careful selection of the dopants.

Keywords: DOPED NANOMATERIALS; CDTE; CDSE; CDS; TIO2; SILICON; ULTRAFAST DYNAMICS; ELECTRONIC PROPERTIES

Document Type: Review article

DOI: 10.1166/jnn.2005.310

Your trusted access to this article has expired.

The full text electronic article is available for purchase. You will be able to download the full text electronic article after payment.

$413.00 plus tax Refund Policy