Doped Semiconductor Nanomaterials

Authors: Chen, Xiaobo; Lou, Yongbing; Dayal, Smita; Qiu, Xiaofeng; Krolicki, Robert; Burda, Clemens; Zhao, Chengfang; Becker, James

Source: Journal of Nanoscience and Nanotechnology, Volume 5, Number 9, September 2005 , pp. 1408-1420(13)

Publisher: American Scientific Publishers

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Abstract:

The development and properties of doped nanomaterials including doped titanium dioxide, doped silicon, and doped cadmium telluride are reviewed, as well as their ultrafast dynamics. Doping nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas. The electronic, optical, photochemical, photoelectrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by doping different elements. The materials can be engineered towards specific applications through careful selection of the dopants.

Keywords: DOPED NANOMATERIALS; CDTE; CDSE; CDS; TIO2; SILICON; ULTRAFAST DYNAMICS; ELECTRONIC PROPERTIES

Document Type: Review article

DOI: http://dx.doi.org/10.1166/jnn.2005.310

Publication date: 2005-09-01

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Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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