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Electrical Characterization of Silicon Tips Using Conducting Atomic Force Microscopy

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The electrical properties of n-doped Si tips have been characterized in conducting atomic force microscopy under various conditions. Si tips with SiO2 layer on them present complex electric properties: which include a larger positive threshold bias, which is different from that of its doped semiconductor material. Silicon tips after removing their SiO2 layer had smaller positive threshold bias; such bias varied with the loading force: smaller loading forces corresponding to larger positive threshold biases, and it remained constant at lower levels for larger loading forces. Humidity of experiments influenced the threshold bias: lower relative humidities (<25%) and larger loading forces were in favor of getting stable threshold bias. The conductance increased remarkably in high relative humidity although it was kept in a narrow range when relative humidity was lower than 40%. Loading force didn't affect the conductance in the examined relative humidity conditions. One advantage of bare silicon tips over commercial conducting ones is that they smaller radius than gold-coated tips; this is in more favor of reaching single molecular electronics.
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Document Type: Research Article

Publication date: 2005-08-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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