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Significant Improvement of Luminance and Stability of a Red Electroluminescent Device Using Nanocrystalline Silicon

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An electroluminescent (EL) device using nanocrystalline silicon (nc-Si) was fabricated by annealing after cosputtering of Si chips and silicon dioxide target and subsequent hydrofluoric acid solution treatment. The device emitted a red light with a peak at 670 nm by applying a low direct current (DC) operating voltage of 4.5 V. The external quantum efficiency (EQE) of red luminescence at 4.5 V was 0.35%. Moreover, the intensity of red luminescence was very stable for an operating time of 15 000 min. These results are a strong indication that the HF-treated device can be adapted to future light-related devices.
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Keywords: ELECTROLUMINESCENT DEVICE; EXTERNAL QUANTUM EFFICIENCY; NANOCRYSTALLINE SILICON; OPTICAL PROPERTY; SPUTTERING TECHNIQUE

Document Type: Research Article

Publication date: 2005-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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