Significant Improvement of Luminance and Stability of a Red Electroluminescent Device Using Nanocrystalline Silicon
Authors: Sato, Keisuke; Hirakuri, Kenji; Izumi, Tomio
Source: Journal of Nanoscience and Nanotechnology, Volume 5, Number 5, May 2005 , pp. 738-741(4)
Publisher: American Scientific Publishers
Abstract:An electroluminescent (EL) device using nanocrystalline silicon (nc-Si) was fabricated by annealing after cosputtering of Si chips and silicon dioxide target and subsequent hydrofluoric acid solution treatment. The device emitted a red light with a peak at 670 nm by applying a low direct current (DC) operating voltage of 4.5 V. The external quantum efficiency (EQE) of red luminescence at 4.5 V was 0.35%. Moreover, the intensity of red luminescence was very stable for an operating time of 15 000 min. These results are a strong indication that the HF-treated device can be adapted to future light-related devices.
Document Type: Research Article
Publication date: May 2005
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