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Photoluminescence and Optical Limiting Properties of Silicon Nanowires

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Abstract:

Si nanowires (SiNWs) have been produced by thermal vaporization on Si(111) substrate without catalysts added. The grown SiNWs have been characterized by Raman scattering, SEM, XRD, and electron diffraction and shown to be highly crystalline with only little impurities such as amorphous Si and silicon oxides. Photoluminescence (PL) study has illustrated that the Si band-to-band gap increases from 1.1 eV for bulk Si to 1.56 eV for the as-grown SiNWs due to quantum confinement effect. A strong PL peak at 521 nm (2.37 eV) is attributed to the relaxation of the photon-induced self-trapped state in the form of surface Si—Si dimers, which may also play an important role in optical limiting of SiNWs with 532-nm nanosecond laser pulses. With the observation of optical limiting at 1064 nm, nonlinear scattering is believed to make a dominant contribution to the nonlinear response of SiNWs.

Keywords: OPTICAL LIMITING; PHOTOLUMINESCENCE; SILICON NANOWIRES

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2005.095

Publication date: 2005-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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