Pressure-Induced Structural Phase Transformations in Silicon Nanowires

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Abstract:

High-pressure structural behavior of silicon nanowires is investigated up to ∼22 GPa using angle dispersive X-ray diffraction measurements. Silicon nanowires transform from the cubic to the -tin phase at 7.5–10.5 GPa, to the Imma phase at ∼14 GPa, and to the primitive hexagonal structure at ∼16.2 GPa. On complete release of pressure, it transforms to the metastable R8 phase. The observed sequence of phase transitions is the same as that of bulk silicon. Though the X-ray diffraction experiments do not reveal any size effect, the pressure dependence of Raman modes shows that the behavior of nanowires is in between that of the bulk crystal and porous Si.

Keywords: PHASE TRANSITIONS; RAMAN SCATTERING; SILICON NANOWIRES; X-RAY DIFFRACTION

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2005.109

Publication date: May 1, 2005

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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