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Effect of Thermal Treatment on Carbon-Doped Silicon Oxide Low Dielectric Constant Materials

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Carbon-doped silicon oxide (SiOCH) low dielectric constant (low-k ) material is a good candidate for advanced interconnect technology. Good thermal stability of the dielectric is required due to the many thermal processes involved during IC fabrication. The thermal stability of tetramethylcyclote-trasiloxane (TMCTS) based plasma-enhanced chemical vapor deposition (PECVD) carbon doped low-k material with annealing temperature from 400 to 800 °C in N2 was studied. The thermal stability temperature of TMCTS based carbon doped low-k material is 600 °C. Above 600°C annealing, the thermal energy can break Si–CH3, Si–C, Si–H, and C–H bonds leading to outgasing, which results in film composition change, weight loss, and thickness shrinkage. Film composition changes, especially carbon loss and oxygen incorporation,can degrade its reliability extremely. Carbon is desorbed in the form of CH4, CO, and other hydrocarbon.
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Document Type: Research Article

Publication date: 2005-04-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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