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Doping of Si into GaN Nanowires and Optical Properties of Resulting Composites

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Doping of Si into GaN nanowires has been successfully attained via thermal evaporation in the presence of a suitable gas atmosphere. Analysis indicated that the Si-doped GaN nanowire is a single crystal with a hexagonal wurtzite structure, containing 2.2 atom % of Si. The broadening and the shift of Raman peak to lower frequency are observed, which may be attributed to surface disorder and various strengths of the stress. The band-gap emission (358 nm) of Si-doped GaN nanowires relative to that (370 nm) of GaN nanowires has an apparent blue shift (~12nm), which can be ascribed to doping impurity Si
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Document Type: Short Communication

Publication date: 01 April 2005

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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