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Application of the Taguchi Analytical Method for Optimization of Effective Parametersof the Chemical Vapor Deposition Process Controlling the Production of Nanotubes/Nanobeads

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Seven variable parameters of the chemical vapor deposition system have been optimized with the help of the Taguchi analytical method for getting a desired product, e. g., carbon nanotubes or carbon nanobeads. It is observed that almost all selected parameters influence the growth of carbon nanotubes. However, among them, the nature of precursor (racemic, R or Technical grade camphor) and the carrier gas (hydrogen, argon and mixture of argon/hydrogen) seem to be more important parameters affecting the growth of carbon nanotubes. Whereas, for the growth of nanobeads, out of seven parameters, only two, i. e., catalyst (powder of iron, cobalt, and nickel)and temperature (1023 K, 1123 K, and 1273 K), are the most influential parameters. Systematic defects or islands on the substrate surface enhance nucleation of novel carbon materials. Quantitative contributions of process parameters as well as optimum factor levels are obtained by performing analysis of variance (ANOVA)and analysis of mean (ANOM), respectively.
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Keywords: CARBON NANOBEADS; CARBON NANOTUBE; CNB BY TAGUCHI OPTIMIZATION; CNT BY TAGUCHI OPTIMIZATION; CVD FOR CNT; TAGUCHI OPTIMIZATION FOR CNT

Document Type: Research Article

Publication date: 2005-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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