Author: Akinaga Hiro

Source: Journal of Nanoscience and Nanotechnology, Volume 5, Number 2, February 2005 , pp. 250-254(5)

Publisher: American Scientific Publishers

Abstract:

A huge positive magnetoresistance effect, about 4 orders of magnitude at room temperature, was discovered in metal–semiconductor hybrid nanostructures. The hybrid material consisting of metallic nanostructures that are fabricated on a GaAs substrate by ultra-high vacuum deposition method exhibits magnetic field—sensitive current-voltage characteristics. When a constant voltage above the threshold value, is applied to the film, a very steep change in the current, which we term magnetoresistive switch, is driven by the huge magnetoresistance effect under a relatively low magnetic field at room temperature. The magnetoresistance effect is very sensitive to the nanoscale morphology of the hybrid film; in other words, one can control the magnetoresistance function at will by modifying the nanostructure of this material. The origin of the magnetoresistive switch effect and its possible application as a magnetic field sensor is discussed.

Keywords: MAGNETORESISTANCE; MAGNETORESISTIVE SWITCH; MAGNETIC FIELD SENSOR; METALSEMI-CONDUCTOR HYBRID; NANOSTRUCTURE

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2005.049

Publication date: 2005-02-01

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