Magnetic-Field-Sensing Materials Composed of Metal–Semiconductor Hybrid Nanostructures
Abstract:A huge positive magnetoresistance effect, about 4 orders of magnitude at room temperature, was discovered in metal–semiconductor hybrid nanostructures. The hybrid material consisting of metallic nanostructures that are fabricated on a GaAs substrate by ultra-high vacuum deposition method exhibits magnetic field—sensitive current-voltage characteristics. When a constant voltage above the threshold value, is applied to the film, a very steep change in the current, which we term magnetoresistive switch, is driven by the huge magnetoresistance effect under a relatively low magnetic field at room temperature. The magnetoresistance effect is very sensitive to the nanoscale morphology of the hybrid film; in other words, one can control the magnetoresistance function at will by modifying the nanostructure of this material. The origin of the magnetoresistive switch effect and its possible application as a magnetic field sensor is discussed.
Document Type: Research Article
Publication date: February 1, 2005
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