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Metal-Oxide-Semiconductor Capacitors Fabricated by Layer-by-Layer Nanoassembly and Microfabrication

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Abstract:

Metal oxide semiconductor (MOS) capacitors were fabricated by electrostatic layer-by-layer self- assembly (LbL-SA) combined with a modified lift-off technique. The MOS capacitors were built on both n-type and p-type silicon substrates. The numbers of silicon dioxide (SiO2) nanoparticle layers were varied to characterize the electrical performance of MOS capacitors. Unlike the conventional process, LbL-SA allows us to deposit the thin films for a semiconductor device with a lower temperature, lower cost, and shorter processing time. The stability of the silica insulation layers was also investigated. Atomic force microscopy (AFM) served to monitor the film quality of the self-assembled thin films.

Keywords: CAPACITORS; LAYER-BY-LAYER ASSEMBLY; METAL OXIDE SEMICONDUCTOR; NANOASSEMBLY

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2005.038

Publication date: February 1, 2005

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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