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Morphology and Microstructure at Different Scales of Porous Silicon Prepared by a Nonconventional Technique

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In this work we present first results concerning the detailed structure of porous silicon (PS) layers prepared by a new method using a vapour-etching (VE)-based technique. Studies of the photoluminescence properties of VE-based PS show that the visible emission occurs at high energies as compared with PS prepared by conventional techniques. To understand the VE-based PS features, we need to point out the PS microstructure throughout its general morphology. For this purpose a microscopy multiscale study was done. Scanning, conventional transmission, and high-resolution transmission electron microscopes were employed. The investigations were made on PS films prepared from moderately and heavily doped n- and p-type silicon. SEM images show that VE-based PS layers are essentially formed of clusters like interconnected structures. TEM studies show that these clusters are composed of nanocrystallites with different shapes. The effect of the doping type of the starting Si substrate on the characteristics of the PS layers was examined (thickness, porosity, behavior). Pore propagation was found to depend on doping type. The crystallinity of the PS layers was also locally studied in depth.
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Document Type: Research Article

Publication date: 2003-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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