Interplay of Confinement, Strain, and Piezoelectric Effects in the Optical Spectrum of GaN Quantum Dots
Authors: Fonoberov, Vladimir A.; Pokatilov, Evghenii P.; Balandin, Alexander A.
Source: Journal of Nanoscience and Nanotechnology, Volume 3, Number 3, June 2003 , pp. 253-256(4)
Publisher: American Scientific Publishers
Abstract:We theoretically investigated excitonic states, energy and oscillator strength of optical transitions in GaN quantum dots characterized by different size, shape, interface, and substrate. On the basis of our multi-band model we determined that the piezoelectric field-induced red shift of the ground state transition, observed in recent experiments, can manifest itself only in strained GaN/AlN dots with the dot height larger than 3 nm. It was also established that the oscillator strength of the red-shifted transitions is small (< 0.05) and decreases fast with increasing the dot size, while the strength of ground state transitions in c-GaN/c-AlN and GaN/dielectric dots is large (~0.4-0.7) and almost independent of the dot size.
Document Type: Research Article
Publication date: June 1, 2003
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