@article {Johnson:2002:1533-4880:325,
title = "Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate Lengths",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2002",
volume = "2",
number = "3-4",
publication date ="2002-07-01T00:00:00",
pages = "325-332",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2002/00000002/f0020003/art00009",
doi = "doi:10.1166/jnn.2002.092",
keyword = "",
author = "Johnson, J. W. and Ren, F. and Pearton, S. J. and Baca, A. G. and Han, J. and Dabiran, A. M. and Chow, P. P.",
abstract = "The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf
plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching
and power microwave applications. 
",
}