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Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate Lengths

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The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.
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Document Type: Research Article

Affiliations: 1: Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA 2: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA 3: Sandia National Laboratories, Albuquerque, New Mexico 87185, USA 4: Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA 5: SVT Associates, Eden Prairie, Minnesota 55344, USA

Publication date: 2002-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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