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A First Step in Prediction of the Nanoscale Structure of Porous Silicon from Processing Parameters

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Abstract:

The present work addresses the formation of porous silicon layers by means of anodic dissolution of p- and p+-type boron-doped (100) silicon wafers in 15, 25, and 35 vol% HF-ethanol solutions. The study concerned the dependence of the porous silicon layer growth rate dh/dt on electric current density i as well as on HF concentration. The formation of a porous silicon layer was found to follow a generic linear relationship, ln (dh/dt) − ln(i) , which holds irrespective of the processing conditions. The combination of two equations, experimental and theoretical, derived from Faraday's equation, allowed us to reach conclusions on the relationship between the growth rate dh/dt and the degree of porosity, constituting a first step in prediction of the nanoporous structure of silicon based on processing parameters. This electrochemical approach complements physical models of silicon pore formation.

Keywords: NANOPOROUS STRUCTURE; POROUS SILICON; PROCESSING PARAMETERS

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2001.021

Affiliations: 1: Laboratory of Physical Metallurgy and Materials Science, Helsinki University of Technology, P.O. Box 6200, 02015 HUT, Finland 2: Faculty of Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739, Japan

Publication date: 2001-06-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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