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Single-Wall Carbon Nanotubes under High Pressures to 62 GPa Studied Using Designer Diamond Anvils

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Abstract:

Single-wall carbon nanotube samples were studied under high pressures to 62 GPa using designer diamond anvils with buried electrical microprobes that allowed for monitoring of the four-probe electrical resistance at elevated pressure. After initial densification, the electrical resistance shows a steady increase from 3 to 42 GPa, followed by a sharp rise above 42 GPa. This sharp rise in electrical resistance at high pressures is attributed to opening of an energy band gap with compression. Nanoindentation hardness measurements on the pressure-treated carbon nanotube samples gave a hardness value of 0.50 ± 0.03 GPa. This hardness value is approximately 2 orders of magnitude lower than the amorphous carbon phase produced in fullerenes under similar conditions. Therefore, the pressure treatment of single-wall carbon nanotubes to 62 GPa did not produce a superhard carbon phase.

Keywords: DIAMOND; DIAMOND ANVILS; ELECTRICAL RESISTANCE; HARDNESS; HIGH PRESSURE; NANOINDENTATION; NANOTUBES

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2001.026

Affiliations: 1: Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294-1170, USA 2: Lawrence Livermore National Laboratory, Livermore, California 94550, USA

Publication date: June 1, 2001

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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