IngentaConnect Anisotropic Thermal Conductivity of Ge Quantum-Dot and Symmetrica...

Authors: W.L. Liu¹; T. Borca-Tasciuc²; G. Chen³; J.L. Liu⁴; K.L. Wang⁴

Source: Journal of Nanoscience and Nanotechnology, Volume 1, Number 1, March 2001 , pp. 39-42(4)

Publisher: American Scientific Publishers

Abstract:

We report the first experimental results on the temperature dependent in-plane and cross-plane thermal conductivities of a symmetrically strained Si/Ge superlattice and a Ge quantum-dot superlattice measured by the two-wire 3 method. The measured thermal conductivity values are highly anisotropic and are significantly reduced compared to the bulk thermal conductivity of the structures. The results can be explained by using heat transport models based on the Boltzmann transport equation with partially diffusive scattering of the phonons at the superlattice interfaces.

Keywords: THERMAL CONDUCTIVITY; GE QUANTUM DOT; SI/GE SUPERLATTICES; ANISTROPY

Document Type: Communications

DOI: 10.1166/jnn.2001.013

Affiliations: 1: Nanoscale Heat Transfer and Thermoelectrics Laboratory, Mechanical and Aerospace Engineering Department, University of California, Los Angeles, California 90095, USA 2: Nanoscale Heat Transfer and Thermoelectrics Laboratory, Mechanical and Aerospace Engineering Department, University of California, Los Angeles, California 90095, USA 3: Nanoscale Heat Transfer and Thermoelectrics Laboratory, Mechanical and Aerospace Engineering Department, University of California, Los Angeles, California 90095, USA 4: Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90095, USA

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Anisotropic Thermal Conductivity of Ge Quantum-Dot and Symmetrically Strained Si/Ge Superlattices