Authors: Jun, Wang; Matham, Murukeshan V.; Krishna, Juluri B.; Ngoi, Bryan K.A.
Source: Journal of Holography and Speckle, Volume 3, Number 1, June 2006 , pp. 22-26(5)
Publisher: American Scientific Publishers
Abstract:
Subsurface defects below a polished wafer surface when undetected lead to high wafer rejection rates at the end of wafer processing. This paper presents a speckle-shearing interferometry approach to perform a real-time nondestructive, whole-field inspection on such unpolished Si-wafers with a strain resolution of 4.5 × 10−5. The results obtained were later compared with X-ray microscopy under an image resolution of 0.67 μm/pixel.Keywords: SI-WAFERS; SUBSURFACE DEFECTS; NONDESTRUCTIVE INSPECTION; PHASE SHIFTING; SPECKLE-SHEARING INTERFEROMETRY; X-RAY MICROSCOPY
Document Type: Research article
DOI: 10.1166/jhs.2006.003
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