Memristor: A Versatile Nonlinear Model for Dopant Drift and Boundary Issues
Memristor is a Nanoscale device with inbuilt capability of memorizing the net value of charge passed through it in form of resistance without any requirement of power to hold the data. Many other applications include memristor for better performance without disturbing any power and area limits. Here we modeled memristor in MATLAB for understanding the Nonlinear effect and Boundary effect issues in memristors by including nonlinear dopant drift kinetics. A window function is proposed for improving the output response of the nonlinear model and to make it more flexible for independent scalability and nonlinearity extent by introducing one scaling parameter (j). With the aid of this model, we examined current–voltage characteristics and effect of nonlinear dopant kinetics in memristor. The simulated I–V characteristics have been compared with the standard experimental data for 5 nm memristor presented by research team at HP labs in 2008. The comparison is justifying the presence of scaling parameter in widow function by showing a great coordination with the standard data at p = 1 and j = 0.9 when the driving voltage wave is V(t) = V 0 sin(2πft); V 0 = 1 volt, Time period t = 1 sec, OFF to ON Resistance ratio β = 50, On state resistance R on 200 Ω and Average dopant ion mobility μ = 10−14 m2/V·Sec and initial normalized boundary position is x 0 = 0.001 in 5 nm core length memristor.
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Document Type: Research Article
Affiliations: Department of ECE, NIT Jalandhar, 144011, Punjab, India
Publication date: 01 May 2017
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