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Perpendicular Electric Field Effect on Bilayer Graphene Carrier Statistic

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In this paper, the effect of interlayer voltage V on the bandgap and density of state (DoS) and carrier concentration is analysed using a new analytical approach. We begin by modelling of the DoS followed by carrier concentration as a function V. In addition, we model the carrier concentration in degenerate and non-degenerate regimes and the effect of V on them is studied. It is found that as V increases, carrier concentration and bandgap increase too. In addition, we realized that there is a saturation point in profile of bangap respect to V, which is calculated in this paper.
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Document Type: Research Article

Publication date: 01 September 2013

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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