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Analytical Parametric Modeling of Nanoscale Surrounding Gate MOSFET Based on the Poisson's Equation

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In this paper lightly doped surrounding gate (SGT) MOSFET, which is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions linear, saturation, subthreshold. In this paper different aspects of previously presented analytical transconductance and subthreshold slope models for other MOSFET technologies has been compared with SGT MOSFETs in nanometer dimensions. Since, when the technology enters in the nanometer range has created operational problems, such as leakage current, subthreshold conduction, gate current etc.
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Document Type: Research Article

Publication date: 2013-03-01

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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