Analytical Parametric Modeling of Nanoscale Surrounding Gate MOSFET Based on the Poisson's Equation
In this paper lightly doped surrounding gate (SGT) MOSFET, which is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions linear, saturation, subthreshold. In this paper different aspects of previously presented analytical transconductance and subthreshold slope models for other MOSFET technologies has been compared with SGT MOSFETs in nanometer dimensions. Since, when the technology enters in the nanometer range has created operational problems, such as leakage current, subthreshold conduction, gate current etc.
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Document Type: Research Article
Publication date: 2013-03-01
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