Skip to main content

Supply Voltage Minimization Techniques for SRAM Leakage Reduction

Buy Article:

$105.00 plus tax (Refund Policy)

In low power design, it is difficult to suppress leakage current. In memory, leakage power reduction during data-retention in SRAM standby is often addressed by reducing the supply voltage. Each SRAM cell has a minimum supply voltage parameter called the data-retention voltage (DRV), above which the stored bit can be retained reliably. As supply voltage is lowered, leakage power reduces. This paper models the DRV of SRAM module, and analyzes the SRAM cell stability when V DD approaches DRV. DRV of the 4 KB SRAM module in a 0.13 mm technology ranges between 60 and 390 mv.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Data/Media
No Metrics


Document Type: Research Article

Publication date: 2012-08-01

More about this publication?
  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
  • Editorial Board
  • Information for Authors
  • Submit a Paper
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more