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Leakage Power Minimization in SRAM by Using Standby Voltage

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In today's IC design, one of the key challenges is the increase in power dissipation of the circuits which in turn shortens the service time of battery-powered electronics, reduces the long-term reliability of circuits due to temperature-induced accelerated device and interconnects aging processes, and increases the cooling and packaging costs of these circuits. Leakage current suppression in memories is critical in low-power design. By reducing the standby supply voltage (V DD) to its limit, which is the Data Retention Voltage (DRV), leakage power can be substantially reduced. This paper explore show low DRV can be in a standard low leakages RAM module and analyzes how DRV is affected by parameters such as process variations, chip temperature, and transistor sizing. An ana- lytical model for DRV as a function of process and design parameters is presented, and forms the base for further design space explorations. Base for further design space explorations. This model is verified using simulations as well as measurements on 6T SRAM chip in a 180 nm technology. It is demonstrated that an SRAM cell state can be preserved at sub-300 mv standby V DD, with more than 90% leakage power savings. With this cell design, total leakage power is reduced by 90% at high temperature with no performance or stability loss.
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Document Type: Research Article

Publication date: 2012-08-01

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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