Skip to main content

Decreasing of Depth of p-n-Junction in a Semiconductor Heterostructure by Serial Radiation Processing and Microwave Annealing

Buy Article:

$113.00 plus tax (Refund Policy)


It has recently been shown, that manufacturing of diffusive-junction rectifiers and implanted-junction rectifiers in a semiconductor heterostructure after appropriate choosing of parameters of the structure and optimization of annealing time leads to increase of the sharpness of p-n-junction and at one time to increase the homogeneity of dopant distribution in doped area. Formation of inhomogeneity of temperature in the heterostructure by laser or microwave annealing gives us possibility to increase the both effects at one time. It has recently been shown by experiments, that pre-doping radiation processing of materials leads to changing of dopant diffusion in comparison with nonprocessed one. In this paper we consider the possibility to use serial radiation processing of materials of heterostructure before doping and microwave annealing of radiation defects after doping to increase the sharpness p-n-junctions and at one time to increase the homogeneity of dopant distribution in doped area in the heterostructure.


Document Type: Research Article


Publication date: 2012-01-01

More about this publication?
  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
  • Editorial Board
  • Information for Authors
  • Submit a Paper
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more