Characteristics of Three-Dimensional Simulation and Design of Fin Field Effect Transistors with 37∼18 nm Channel Length
A three-dimensional (3-D) simulation and design for triple-gate fin field effect transistors (FinFETs) with a channel length in the range of 38∼17 nm are presented. The effects of structural parameters such as gate length, channel height (H fin), and channel thickness (T fin) on the electrical characteristics of FinFETs are analyzed in detail. The short channel effects (SCEs) of deep-sub-tenth micron FinFETs are investigated with the electric field, conduction band, and total current density on the FinFET device determined. A 3D simulation of FinFETs is proposed. For some applications, the 3D structure could be cut into several 2D graphs, allow the inside of the 3D simulated structures to be viewed. Results show that FinFETs with a channel height of 2 nm and thickness of 1.4 nm have a low subthreshold swing (<90 mV/decade) and a high on/off current ratio (>105).
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Document Type: Research Article
Publication date: 2011-10-01
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