Bilayer Graphene Nanoribbon Carrier Statistic in Degenerate and Non Degenerate Limit
Authors: Mousavi, S. Mahdi; Ahmadi, Mohammad Taghi; Sadeghi, Hatef; Nilghaz, Azadeh; Amin, Azizah; Johari, Zaharah; Ismail, Razali
Source: Journal of Computational and Theoretical Nanoscience, Volume 8, Number 10, October 2011 , pp. 2029-2032(4)
Publisher: American Scientific Publishers
Abstract:Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates.
Document Type: Research Article
Publication date: October 1, 2011
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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