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On Possible Use of Capped Quantum Dots in Memory Devices

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Abstract:

Here we report on the analysis of a possible use of semiconductor quantum dots (QDs) in memory storage devices. We analyze the charging and discharging behavior of capped CdSe QDs deposited on graphite in ambient conditions. Individual QDs can be addressed (charged) with the synergistic action of light and mechanical interaction with a probe of an atomic force microscope (AFM). The analyzed QDs allow recording information at a density up to 1 Tb/cm2. We demonstrate that it is possible to attain the charging time (writing) down to 10 ns while keeping discharging (storage) for more than 1000 years.

Keywords: MEMORY DEVICES; QUANTUM DOTS

Document Type: Short Communication

DOI: https://doi.org/10.1166/jctn.2011.1710

Publication date: 2011-03-01

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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