Radiative Recombination and Migration Effects in Ensembles of Si Nanocrystals: Towards Controllable Nonradiative Energy Transfer
In the present review we consider both radiative and nonradiative relaxation processes in densely packed ensembles of silicon nanocrystals (diameters vary within 2–6 nm) embedded in dielectric layers, with regard to the problem of controllable spatial transfer and transformation of elementary excitations and their energy. For this purpose, the rates of the interband radiative transitions, the phonon-assisted exciton migration (through the Forster-Dexter mechanism) and tunneling from one quantum dot to any other dot have been calculated. It was found that, the migration of excited carriers is the fastest process if the nanocrystals are close enough (the distances are less than ∼0.5–1 nm depending on the relationship between the sizes of emitting and accepting nanocrystals) while the exciton transfer turns out to be slower than the interband radiative recombination, and much slower than the tunneling of electrons and holes. Our findings allow one to conclude that dielectric films with certain “architectures” of Si nanocrystal arrays can really acts as energy-guides transferring elementary excitations along the films.
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Document Type: Review Article
Publication date: 2011-03-01
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- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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